Christophe F. Lair
Partner

Prior to attending law school, Mr. Lair worked as a research engineer for STMicroelectronics in France and for the French atomic agency (CEA-DAM). During his career as an engineer and project leader, Mr. Lair worked on the development of a new generation of microchips discovered new processes of manufacturing for advanced microchips, and implemented new materials for advanced interconnects. He is knowledgeable in all semiconductor processes and semiconductor tools (processing tools: etching, spin coating, lithography, CVD and PVD deposition/ characterization tools: SEMCD, optical and electrical tools…) and spent a significant amount of time in clean rooms doing research. Mr. Lair has served as principal author on several articles in these areas for international conferences.

American Intellectual Property Law Association

“Process for Achieving Intermetallic and/or Intrametallic Air Isolation in an Integrated Circuit, and Integrated Circuit Obtained” – co-inventor with Jerome Alieu and Michel Haond. Patent No.: U.S. 6,812,113; Patent Issued: November 2, 2004

"New method to study unlanded via architecture. Application to advanced interconnects: Al with Low k and copper dual damascene", International Interconnects Technology Conference, IITC'2000, San Francisco, California, 2000

"Influence of HSQ dielectric on process conditions and impact on CMOS circuit performance", ESSDERC'1999, Leuven, Belgium, 1999

"Integration of HSQ in a sub .2 micron CMOS technology with unlanded via architecture", VMIC'1999, Santa Clara, California, September 1999 (Outstanding Paper Award of the Conference)

"Developing a 0.18-Micron CMOS Process", IEEE Micro, vol. 19, no. 5, pp16-22, September 1999

"Planarization properties of hydrogen silsesquioxane (HSQ) influence on CMP", MAM'99 European Workshop on Materials for Advanced Metallization No. 3, Ostende , BELGIUM, 1999

Proceedings 1998 VMIC conference, IMIC, Tampa, Florida, 1998