Dingkun Ren

Prior to joining Pillsbury, Dingkun worked in the Silicon Valley office of a major international law firm, where he drafted and prosecuted patents and coordinated global patent strategies. He represented both established companies and startups across a range of technologies. His experience also included freedom-to-operate (FTO) analyses, noninfringement and invalidity analyses and other patent-related matters.

Before practicing law, Dingkun spent several years as a hardware engineer in Silicon Valley. He was a display engineer at Apple Inc., focusing on display modules, display features and new display technology development. Prior to joining Apple, Dingkun worked at Lumileds B.V. as an LED scientist, where he developed semiconductor LEDs and applied advanced LED architectures to the latest prototypes.

Dingkun’s doctoral and postdoctoral work at UCLA focused on compound semiconductors, nanophotonics, optoelectronics, infrared sensing, single-photon detection and photonic integrated circuits. He published 12 first-author/co-first author journal articles. He was also invited as a reviewer for more than 35 high-impact scientific journals and conferences.

• “Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire photodetectors with p-n heterojunctions,” Nanotechnology (November 2018)
• “Uncooled photodetector at short-wavelength infrared using InAs nanowire photoabsorbers on InP with p-n heterojunctions,” Nano Letters (November 2018)
• “A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires,” Nanotechnology (September 2018)
• “Feasibility of tracking multiple single-cell properties with impedance spectroscopy,” ACS Sensors (May 2018)
• “Axial InAs(Sb) inserts in selective-area InAsP nanowires for optoelectronics beyond 2.5 µm,” Optical Materials Express (April 2018)
• “Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model,” Nanoscale (April 2018)
• “Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates,” Nanoscale (May 2017)